An ALD reactor for thin film (< 200nm) deposition. Features a large chamber capable of depositing onto up to 200 mm diameter wafers (smaller samples on carriers), and 3D objects (up to 20 mm height). The system is capable of depositing conformal coatings on porous and high-aspect ratio substrates and is equipped with a load lock for loading samples, minimising chamber venting time and contamination.

Precursor, reactant, and process availability:

• 2 sources for high volatility liquid precursors (no heating) + 1 source for water
• 2 sources for lower volatility liquid and solid precursors (heating up to 200C)
• 1 boost source for low volatility precursors (heating up to 300C)
• Gaseous precursors/reactants: O₃, NH₃, (H₂S)
• Remote plasma source (ICP, 13.56 MHz)
• Plasma gas options: O₂, H₂/N₂, NH₃
• Processing temperature 50-500C
• Processes currently available: Al₂O₃ (thermal with H₂O or O₃, or plasma-enhanced with O₂-plasma), TiO₂, HfO₂, SnO₂, In₂O₃, ITO, TiN, AlN, Au
• Processes under development: HfN, (CuS)
• New processes developed upon request